• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a fingerprint acquisition device comprising an image matrix sensor (1), said sensor being configured to acquire at least one image of the fingerprints of a finger (2) when said finger (2) is presented to said sensor in its acquisition field, in which the matrix sensor comprises a semiconductor material body (3) on which an array of active pixels (4) is produced, the pixels of said active pixel matrix comprising each at least one photodiode (5) and being configured to operate in solar cell mode.
    公开号:FR3027730A1
    申请号:FR1460155
    申请日:2014-10-22
    公开日:2016-04-29
    发明作者:Yang Ni
    申请人:New Imaging Technologies SAS；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD OF THE INVENTION The present invention relates to a fingerprint acquisition device comprising a matrix image sensor, and more particularly to a portable electronic device provided with a device. fingerprint acquisition.
    [0002] Many portable electronic devices provide access to digital resources. This is particularly the case of smart mobile phones of the type called "snnartphone". Some of the data in these digital resources is confidential, and their access must be secure. The first type of access protection historically used for phones was to request the identification of a personal identification number (better known by the acronym of PIN for "personal identification nunnber") at four digits. However, this type of protection has proved easy to circumvent, and heavy to implement by the user, in particular because effective protection requires that this number be filled in each session of use of the phone. Thus, other means of securing telephones have been explored to allow locking and unlocking operations of the phone that are more ergonomic and simpler. The fingerprint detection of a user has proved to be one of the simplest and most effective means of protection.
    [0003] Thus, portable electronic devices equipped with a fingerprint acquisition device have been proposed. These devices include a fingerprint sensor that must be both inexpensive and as compact as possible, so that it can be incorporated into a mobile device such as a snnartphone. In particular, for this application, the fingerprint sensor must be thin, and have a small footprint. Currently, the thin fingerprint sensors embedded in phones mainly use the principle of capacitive fingerprint detection. In these sensors, the user's finger comes into contact with a film on the surface of the sensor, and the material differences between an underlying sensing electrode and the surface create a difference in electrical capacitance that can be measured by a sensor. active circuit of the sensor. However, capacitive sensors suffer from several limitations for this application. Thus, capacitive sensors are sensitive to electrostatic disturbances. In addition, these sensors require a complex and expensive structure, with, for example, an anisotropic single crystal sapphire blade to protect the sensor while allowing the capacitive variation of detection surface to pass. Therefore, other fingerprint sensors using the principle of optical detection have been developed. It should be noted that the need for a small thickness of the sensors does not allow the use of optical sensors total internal reflection, or TIR, acronym for "total internat reflection", whose optical elements are too bulky. US Pat. No. 7,366,331 presents an example of a thin fingerprint optical sensor. It is proposed to have a transparent film between a detection CMOS chip and the surface of the finger to improve the contrast resulting from the presence or absence of direct contact between the sensor surface and the surface of the finger. Lighting by a light source placed near the detection surface is necessary. In this case, a ring of light-emitting diodes surrounds the detection surface. US patent application 2006/0102974 also has a similar structure. Such optical structures are simple and can have a small footprint, which allows them to be placed on a portable electronic device such as a smartphone. However, the image of fingerprints thus obtained has a very low contrast, which limits the reliability. For fingerprints of a human finger, the contrast between the darkest and the lightest areas of fingerprints is usually less than 20% or even 10%. When the finger is placed on the detection surface of the fingerprint sensor, a strong light intensity gradient appears in particular because the light source illuminating the finger is placed on the periphery of the sensor and the ambient light can also enter in the sensor by the sides of it. Thus, there are very large differences in light intensity detected by the sensor between on the one hand the center of the detector surface, where is the central area of contact with the finger, which is dark, and other parts of the periphery of the detector surface, very clear due to lighting and ambient light. These large differences in light intensity affect the efficiency of these sensors. Indeed, either the exposure of the sensor is chosen according to the light areas in the peripheries, and in this case the central zone is too dark, the exposure of the sensor is chosen according to the central zone, and in this case the high brightness in the periphery areas saturates the sensor.
    [0004] FIG. 1 is a diagram illustrating a finger 2 placed on the surface of a transparent film 105 of a sensor 101, and which matches the curve 102 of the spatial distribution of the light intensity which is recorded by the sensor 101 The operating range of the sensor is between the two dashed lines. It is observed that the light intensity reaches both ends of the operating range of the sensor. At the edges of the finger 2, the light intensity reaches a ceiling 103 corresponding to the upper limit of the sensitivity of the sensor 101, when the sensor 101 reaches saturation light. The sensor 101 is then no longer able to reproduce the image of the fingerprints, it is dazzled by this too high intensity. Conversely, at the center of the finger, the light intensity reaches a floor 104 corresponding to the low limit of the sensitivity of the sensor 101. The sensor 101 is then no longer able to reproduce the image of the fingerprints, it does not distinguish these. Indeed, assuming that the CMOS image detector has a detection threshold 1, a very good conventional CMOS detector can maintain a good operation up to a level 1000 (60dB of dynamics). An example of a typical human finger has a fingerprint contrast of 15%. A typical fingerprint recognition system can work with a poor image with a signal-to-noise ratio of at least 5. In this case, the luminance level at the center of the image should be at least 5/15% = 33 In order to avoid the loss of contrast at the edges of the sensor due to detector saturation, whose dynamics are limited to 1: 1000, the edges can not have a luminance 33 times greater than the central zone of the corresponding image. in the center of the finger. However, it frequently happens that the lighting conditions are such that the difference is higher.35 Indeed, the sensor can in particular be used in a sunny environment. In this case, not only the brightness can be very strong, but it can also present very strong variations. In this situation, the setting of the exposure time in a conventional sensor becomes very difficult, all the more so because, because of the need for a small thickness, an optical system provided with a diaphragm would control the exposure of the sensor. For example, a CMOS sensor generally saturates at a light illumination of less than 10 Lux with a exposure time of 40 ms. When exposed to direct sunlight, the illuminance to which the sensor is exposed can easily reach 100 kLux. In this case, the exposure time should be reduced to 4 us to avoid saturation of the sensor. When a finger is placed on the sensor, the luminance can drop to a factor of 1000 in the center of the sensor, but remains that of the ambient lighting on the edges of the finger. The sensors used in the state of the art do not make it possible to respond to such variations in luminance in a sufficiently short time for interactive use by the user. State-of-the-art systems, such as that of US Pat. No. 7,366,331, provide a light source for illuminating the finger, in order to reduce the luminance variation, to compensate for the low operating dynamics of linearly rendered CMOS sensors. . Moreover, the transparent surface film necessary for the coupling required between the finger and the sensor reduces the contrast of the acquired image and thus makes the capture and recognition of fingerprints more difficult. PRESENTATION OF THE INVENTION The object of the invention is to remedy at least in part these disadvantages and preferentially to all, by proposing the use of a logarithmic sensor for the acquisition of fingerprints. It is thus proposed a fingerprint acquisition device comprising a matrix image sensor, said sensor being configured to acquire at least one fingerprint image of a finger when said finger is presented to said sensor in its field of view. acquisition, wherein the matrix sensor comprises a body of semiconductor material on which is made a matrix of active pixels, the pixels of said active pixel array each comprising at least one photodiode and being configured to operate in solar cell mode.
    [0005] A logarithmic sensor has the advantage of having a very wide dynamic range of operation. An absence of saturation can be ensured without any control even in case of direct exposure to the sun. This great dynamic of operation provides instant responsiveness for a mobile device. This device is advantageously completed by the following characteristics, taken alone or in any of their technically possible combinations: the photodiodes are configured to present a voltage response according to a logarithmic law with respect to the illumination of said pixels; the image matrix sensor is a CMOS sensor; - Links for transmitting the images acquired by said sensor through the semiconductor material body of the sensor for connecting a surface of the sensor body to a substrate provided with connection tracks; the body of the sensor comprises an upper face at which the matrix of active pixels is formed and a lower face in contact with a substrate provided with connection tracks, in which the upper face of the body of the sensor comprises at least two zones; which have different levels: - a higher level at least for a zone intended to be facing the finger, and a lower level for a zone intended to receive links for transmitting the images acquired by said sensor; the lower level zone is covered in the direction of the acquisition field by a protective material; the sensor has no overlay covering the matrix of active pixels, so that when the finger is presented to said sensor, said finger is in contact with the matrix of active pixels; the device comprises an optical fiber plate disposed on the surface of the pixel array and consisting of a bundle of optical fibers oriented towards the acquisition field; the wafer is configured to contact the finger when said finger is presented to the sensor; the device comprises a pressure sensitive member arranged to emit a signal controlling the acquisition of said image when the finger exerts pressure on the device.
    [0006] PRESENTATION OF THE FIGURES The invention will be better understood, thanks to the following description, which refers to embodiments and variants according to the present invention, given as non-limiting examples and explained with reference to the attached schematic drawings. , in which: - Figure 1, already commented, illustrates a finger placed on the surface of a sensor, and maps the curve of the spatial distribution of the light intensity which is recorded by the sensor; FIG. 2 is a diagram illustrating a detail of a matrix image sensor according to a possible embodiment of the invention, on which a finger is placed; FIG. 3 illustrates a finger placed on the surface of a sensor according to a possible embodiment of the invention, and maps the curve of the spatial distribution of the light intensity which is recorded by the sensor; FIG. 4 illustrates an example of an active pixel structure for a photodiode in logarithmic mode; - Figures 5 to 8 are diagrams illustrating different types of fingerprint acquisition devices according to possible embodiments of the invention.
    [0007] In all the figures, the similar elements are designated by the same references. DETAILED DESCRIPTION With reference to FIG. 2, the fingerprint acquisition device comprises an image matrix sensor 1 which is configured to acquire at least one image of the fingerprints of a finger 2 when said finger 2 is presented to said finger sensor in its acquisition field. The matrix sensor 1 comprises a semiconductor material body 3 on which an array of active pixels 4 is made.
    [0008] The sensor 1 is a logarithmic sensor. The pixels of the active pixel array 4 each comprise at least one photodiode 5 and are configured to operate in solar cell mode. Thus, the photodiodes 5 are configured to present a voltage response according to a logarithmic law with respect to the illumination of said pixels. Typically, the image matrix sensor 1 is a CMOS sensor. Metal interconnections 6 provide the electrical connections between the photodiodes 5.
    [0009] These metal interconnections 6 are represented here in a configuration in which they are in front of the photodiodes 5, that is to say in their acquisition field, between the finger 2 and said photodiodes 5. It is however possible to use a so-called rear-illumination configuration, in which metallic interconnections are behind the photodiodes with respect to the acquisition field thereof, with therefore the photodiodes located between the metal interconnects and the finger. The image matrix sensor 1 is adapted to acquire an image of the surface of a finger placed on its surface. Thus, in the example of Figure 2, a finger 2 is placed on the surface of the sensor 1, that is to say on the surface of the matrix 4. The skin on the surface of a finger have ridges 21 and papillary grooves 22 forming a last-log, commonly referred to as a fingerprint, by association with the trace left by said last-log. While a ridge 21 actually touches the surface of the die 4, air is present between a papillary groove 22 and said surface. These differences in configurations are reflected in an image acquired by the acquisition device by different contrasts, which account for the fingerprints of the finger 2.
    [0010] The acquired image must therefore restore the contrast of the finger disposed in the acquisition field of the sensor. With a device of the state of the art, whose sensor produces a response proportional to the light intensity in its acquisition field, the resulting contrast depends on the absolute luminance received by the sensor. On the other hand, with a logarithmic sensor as in the context of the invention, the contrast is restored independently of the absolute luminance. In fact, the great operating dynamics of the logarithmic sensor makes it possible to eliminate the saturations, and the contrast can then be determined as a function of a relative luminance, in the absence of saturation threshold constituting absolute thresholds. As a result, the image of the fingerprint can be acquired with a constant quality regardless of the lighting conditions, and in particular despite the differences in luminance between the edges of the finger and the center. FIG. 3 is a diagram illustrating a finger 2 placed on the surface of a sensor 1, and which matches the curve 11 of the spatial distribution of the light intensity which is recorded by the sensor 1. Compared with FIG. 1, it can be seen that the variations in luminous intensity, that is to say the contrast, are maintained despite the great differences in light intensities as a function of the zones of the sensor 1, thanks to the absence of saturation of this one. this. In the field of standard CMOS technology, a photodiode is generally formed of a PN junction with N diffusion in a P-type substrate. In operation in solar cell mode, this photodiode generates a negative open-circuit voltage whose absolute value is proportional to the logarithm of the light level of the photodiode.
    [0011] During the exposure, the photodiode is completely discharged and the voltage on the photodiode is then negative: kT (4 VpD = - 71n T., + 1) <where k is the Boltzmann constant, q is the elementary charge, T is the absolute operating temperature of the photodiode and I, represents a reverse current also called saturation current of the junction of the photodiode, observed when a diode is reverse biased in the total absence of light. The voltage on the photodiode is then proportional to the logarithm of the light intensity. It is said in this case that the photodiode works in a logarithmic zone. An example of an active pixel structure is illustrated in FIG. 4. The PN junction forming the photodiode 5 consists of a P-type semiconductor substrate on which an N-type diffusion is carried out. A switch 15 of FIG. The photoelectric element is controlled by a reset command line (reset). A selection switch 16 allows selection of the output of the circuit for its reading. The switch 15 as well as the switch 16 consist of N-channel MOS field effect transistors. Lastly, a buffer amplifier 14 is produced by two P-channel MOS field effect transistors in series powered by a voltage. VCC power supply, the first transistor being connected to a bias voltage (in English "biasing voltage") for adjusting the additional voltage gain that is to be brought to the output voltage Vs. This voltage Vs is connected to the second P-channel MOS field effect transistor of the amplifier. Other circuits that can be used are described in documents EP1354360, EP2186318 or WO2010 / 103464.
    [0012] Several sensor configurations having photoelectric elements whose photoelectric conversion satisfies a logarithmic law are possible. In the examples illustrated, the matrix sensor is mounted on a substrate provided with connection tracks, and the array of active pixels is connected to these connection tracks to enable the images acquired by said sensor to be transmitted. In the example of FIG. 5, the body of the sensor has a parallelepipedal shape, with an upper face at which the matrix of active pixels 4 and a lower face in contact with the substrate 9, which are both flat and parallel, are formed. . Connecting wires 7 connect the upper surface of the semiconductor body 3 to the connecting tracks of the substrate 9, in order to electrically connect the matrix of active pixels 4 to these tracks. These connection son 7 are embedded in a protective layer 10, typically of polymer resin.
    [0013] FIG. 6 illustrates an improvement of the configuration of FIG. 5, which makes it possible in particular to produce a device of smaller thickness. The upper face of the body 3 of the sensor comprises at least two zones 31, 32 having different levels relative to the substrate 9: a higher level at least for a zone 31 intended to be in contact with the finger 2, and a lower level for a zone 32 intended to receive links 7 to enable the images acquired by said sensor to be transmitted. The lower level zone 32 therefore corresponds to a smaller thickness of the body 3 relative to that of the upper level zone 31. The upper level zone 31 thus has a height relative to the substrate 9 greater than that of the lower level zone 32. Conduction tracks 33 on the surface of the lower level zone 32 connect the connection tracks of the matrix 4 to the links 7, said links 7 connecting said conduction paths 33 to the connection tracks of the substrate 9. The level zone 32 lower is covered in the direction of the acquisition field by a protective material 10, typically of polymer resin, and the links 7 are embedded in said protective layer 10, while the upper level zone 31 is left free by the layer 10.35 Such a structure has a thickness less than that of Figure 5, since the thicknesses required for the son of connection 7 do not then translate into an extra thickness of the protective layer 10 relative to the active pixel matrix level 4, which then constitutes the maximum height of the device.
    [0014] To obtain such a structure, it is possible to apply a dry or wet etching of the body 3 around the matrix of active pixels 4. Electric conduction tracks 33 are then deposited by selective electro-plating on the surface of the zone 32 of lower level, to extend the connection tracks of the matrix 4 to the lower level zone 32. The links 7 are then conventionally set up to connect said conduction tracks 33 to the connection tracks of the substrate 9. FIG. 7 illustrates another configuration, in which the semiconductor material body 3 of the sensor is traversed by links 8 for connecting a surface of the body 3 of the sensor to the connection tracks of the substrate 9. This type of connection 8 is known by the acronym TSV, "through silicon via". Although in the illustrated example, the links 8 are perpendicular to the surface of the substrate 9 and to the surface of the body 3 of the sensor 1, other orientations are however possible. This configuration makes it possible to obtain a flat surface, whether for the body 3 of the sensor or for the protective layer 10, which rises on the edges of the body 3, at the same level as this one. In these various embodiments, the sensor 1 may have no overlay covering the matrix of active pixels 4, so that when the finger 2 is presented to said sensor, said finger 2 is in contact with the matrix of active pixels 4. L The absence of overcoating simplifies manufacture, reduces the cost, and makes it possible not to add extra thickness to the sensor 1. A protective overlay in the form of a transparent film can however be provided on the surface of the sensor to protect it. this. Nevertheless, this overlay does not have to present particular characteristics in electrical terms, as is the case for capacitive sensors.
    [0015] FIG. 8 shows another configuration, in which the sensor 1 is mounted on the substrate in a manner similar to that of FIG. 5, but which could equally well be that of FIGS. 6 or 7. An optical fiber plate 12 is arranged at the surface of the sensor 1, so as to conduct the light from the finger receiving zone to the active pixel matrix 4. The optical fiber plate 12 consists of a fiber optic bundle oriented towards the field acquisition. The optical fibers of the wafer 12 are thus oriented in the direction connecting a detection surface to receive the finger to the matrix of active pixels 4. The wafer 12 is configured to come into contact with the finger 2 when said finger is presented to the sensor . The optical fiber board 12 may be crimped into an embellishment room 11 used to hide the underlying elements from the user. This configuration provides excellent protection to the sensor 1, and provides a detection surface for receiving the finger that is flat and smooth. In all embodiments, the fingerprint acquisition device may comprise a pressure sensitive member arranged to emit a signal controlling the acquisition of the image when the finger exerts pressure on the device. The pressure sensitive member may for example be an electromechanical switch or a pressure sensor measuring the pressure. FIG. 8 thus shows a pressure-sensitive member 20 under the substrate 9, configured to detect the pressure exerted by a finger 2 on the sensor, and to control the acquisition of an image by the sensor. A fingerprint acquisition device as described herein is preferably incorporated into a portable electronic device such as a smartphone to acquire fingerprints of a user of the electronic device. The invention is not limited to the embodiment described and shown in the accompanying figures. Modifications are possible, particularly from the point of view of the constitution of the various elements or by substitution of technical equivalents, without departing from the scope of protection of the invention.
    权利要求:
    Claims (11)
    [0001]
    REVENDICATIONS1. Fingerprint acquisition device comprising a matrix image sensor (1), said sensor being configured to acquire at least one fingerprint image of a finger (2) when said finger (2) is presented to said sensor in its acquisition field, characterized in that the matrix sensor comprises a semiconductor material body (3) on which an array of active pixels (4) is made, the pixels of said active pixel array each comprising at least one photodiode ( 5) and being configured to operate in solar cell mode.
    [0002]
    2. Device according to the preceding claim, wherein the photodiodes (5) are configured to present a voltage response according to a logarithmic law with respect to the illumination of said pixels.
    [0003]
    An apparatus according to any one of the preceding claims, wherein the image array sensor is a CMOS sensor.
    [0004]
    4. Device according to any one of the preceding claims, wherein links (8) for transmitting the images acquired by said sensor through the body (3) of semiconductor material of the sensor for connecting a surface of the sensor body. to a substrate (9) provided with connection tracks.
    [0005]
    5. Device according to one of claims 1 to 3, wherein the body (3) of the sensor comprises an upper face at which is formed the matrix of active pixels (4) and a lower face in contact with a substrate (9) provided with connection tracks, in which the upper face of the sensor body (3) comprises at least two zones (31, 32) whose different levels: - a higher level at least for a zone (31) intended to to be facing the finger (2), and - a lower level for a zone (32) intended to receive links (7) to enable the images acquired by said sensor to be transmitted.
    [0006]
    6. Device according to the preceding claim, wherein the zone (32) of lower level is covered in the direction of the acquisition field by a protective material (10).
    [0007]
    7. Device according to one of the preceding claims, wherein the sensor (1) has no overlay covering the matrix of active pixels (4), so that when the finger (2) is presented to said sensor, said finger (2 ) is in contact with the matrix of active pixels (4).
    [0008]
    8. Device according to one of claims 1 to 6, wherein the device comprises an optical fiber wafer (12) disposed on the surface of the pixel array and consisting of a bundle of optical fibers oriented toward the d field. 'acquisition.
    [0009]
    9. Device according to the preceding claim, wherein the wafer (12) is configured to come into contact with the finger (2) when said must is presented to the sensor.
    [0010]
    10. Device according to any one of the preceding claims, comprising a pressure-sensitive member (20) arranged to emit a signal controlling the acquisition of said image when the finger exerts pressure on the device.
    [0011]
    Portable electronic apparatus provided with a fingerprint acquisition device according to any one of the preceding claims.
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    引用文献:
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    法律状态:
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    2016-04-29| PLSC| Publication of the preliminary search report|Effective date: 20160429 |
    2016-10-11| PLFP| Fee payment|Year of fee payment: 3 |
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    2021-07-09| ST| Notification of lapse|Effective date: 20210605 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1460155A|FR3027730B1|2014-10-22|2014-10-22|DEVICE FOR ACQUIRING DIGITAL IMPRESSIONS|FR1460155A| FR3027730B1|2014-10-22|2014-10-22|DEVICE FOR ACQUIRING DIGITAL IMPRESSIONS|
    US15/520,810| US20170316244A1|2014-10-22|2015-10-22|Device for acquiring digital fingerprints|
    CN201580057299.7A| CN107078146A|2014-10-22|2015-10-22|Equipment for obtaining digital finger-print|
    EP15786904.1A| EP3210162A1|2014-10-22|2015-10-22|Device for acquiring digital fingerprints|
    PCT/EP2015/074521| WO2016062822A1|2014-10-22|2015-10-22|Device for acquiring digital fingerprints|
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